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The capacitance between anode and cathode is inversely proportional to the reverse voltage, growing as it approaches 0 volts and into forward bias. There is also a recovery concern: a diode's current will not decrease immediately when switching from forward-biased to reverse-biased, because discharging its stored charge takes a finite amount of ...
This band alignment is due to the biasing conditions that correspond with forward-active mode; forward bias on the emitter-base junction and reverse bias on the base-collector junction. Licensing I, the copyright holder of this work, hereby publish it under the following license:
Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, [1] although this is obviously a function of size).
A PN junction in forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves). A depletion region forms instantaneously across a p–n junction.
An LED begins to emit light when more than 2 or 3 volts is applied in the forward direction. The reverse bias region uses a different vertical scale from the forward bias region to show that the leakage current is nearly constant with voltage until breakdown occurs. In forward bias, the current starts small but increases exponentially with voltage.
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Using the Shockley equation, the small-signal diode resistance of the diode can be derived about some operating point where the DC bias current is and the Q-point applied voltage is . [6] To begin, the diode small-signal conductance g D {\displaystyle g_{D}} is found, that is, the change in current in the diode caused by a small change in ...