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Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and increased concentration of localized states increases the mobility as well. Charge transport in the same material may have to be described by ...
There are two recognized types of charge carriers in semiconductors.One is electrons, which carry a negative electric charge.In addition, it is convenient to treat the traveling vacancies in the valence band electron population as a second type of charge carrier, which carry a positive charge equal in magnitude to that of an electron.
The diffusion coefficient for a charge carrier is related to its mobility by the Einstein relation. For a classical system (e.g. Boltzmann gas), it reads: = where: k B is the Boltzmann constant; T is the absolute temperature; e is the electric charge of an electron
In general, carriers will exhibit ballistic conduction when where is the length of the active part of the device (e.g., a channel in a MOSFET). is the mean free path for the carrier which can be given by Matthiessen's rule, written here for electrons:
The proportionality constant is known as mobility of the carrier, which is a material property. A good conductor would have a high mobility value for its charge carrier, which means higher velocity, and consequently higher current values for a given electric field strength. There is a limit though to this process and at some high field value, a ...
In solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices , such as photodiodes , light ...