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As an application example, the steady-state space-charge-limited current across a piece of intrinsic silicon with a charge-carrier mobility of 1500 cm 2 /V-s, a relative dielectric constant of 11.9, an area of 10 −8 cm 2 and a thickness of 10 −4 cm can be calculated by an online calculator to be 126.4 μA at 3 V. Note that in order for this ...
This behavior is typical of true vacuum tubes that don't contain mercury vapor; larger voltages lead to larger "space-charge limited current". At 4.9 volts the current drops sharply, almost back to zero. The current then increases steadily once again as the voltage is increased further, until 9.8 volts is reached (exactly 4.9+4.9 volts).
It was first used to give the space-charge-limited current in a vacuum diode with electrode spacing d. It can also be inverted to give the thickness of the Debye sheath as a function of the voltage drop by setting J = j i o n s a t {\displaystyle J=j_{\mathrm {ion} }^{\mathrm {sat} }} :
In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region, or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have diffused away, or been forced away by an electric field. The only elements left ...
In thick solar cells there is very little electric field in the active region outside the space charge zone, so the dominant mode of charge carrier separation is diffusion. In these cells the diffusion length of minority carriers (the length that photo-generated carriers can travel before they recombine) must be large compared to the cell ...
The technique observes the device space charge region capacitance where the defect charge state recovery causes the capacitance transient. The voltage pulse followed by the defect charge state recovery are cycled allowing an application of different signal processing methods for defect recharging process analysis.
Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes). This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.
That is, the current is said to be "diffusion controlled". The Cottrell equation describes the case for an electrode that is planar but can also be derived for spherical, cylindrical, and rectangular geometries by using the corresponding Laplace operator and boundary conditions in conjunction with Fick's second law of diffusion .