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In electronics, leakage is the gradual transfer of electrical energy across a boundary normally viewed as insulating, such as the spontaneous discharge of a charged capacitor, magnetic coupling of a transformer with other components, or flow of current across a transistor in the "off" state or a reverse-polarized diode.
Subthreshold leakage in an nFET. Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.
If the gate voltage is below the threshold voltage (left figure), the "enhancement-mode" transistor is turned off and ideally there is no current from the drain to the source of the transistor. In fact, there is a current even for gate biases below the threshold (subthreshold leakage) current, although it is small and varies exponentially with ...
In a "fine-grained" approach, high V th sleep transistors are incorporated within every gate. Low V th transistors are used for the pull-up and pull-down networks, and a high V th transistor is used to gate the leakage current between the two networks. This approach eliminates problems of logic block partitioning and sleep transistor sizing.
Small amounts of currents are always flowing between the differently doped parts of the transistor. The magnitude of these currents depend on the state of the transistor, its dimensions, physical properties and sometimes temperature. The total amount of leakage currents tends to inflate for increasing temperature and decreasing transistor sizes.
Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components. STI is generally used on CMOS process technology nodes of 250 nanometers and smaller.
The transistor speed is proportional to the on-current: The higher the on-current, the faster a transistor will be able to charge its fan-out (consecutive capacitive load). For a given transistor speed and a maximum acceptable subthreshold leakage, the subthreshold slope thus defines a certain minimal threshold voltage.
Many small-signal transistors need to have any breakdown currents limited to much lower values to avoid excessive heating. To avoid damage to the device, and to limit the effects excessive leakage current may have on the surrounding circuit, the following bipolar transistor maximum ratings are often specified: V CEO (sometimes written BV CEO or ...