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Shown for reference is the standard Shockley-diode model (marked by blue-diamonds). The Shockley parameters are I s = 1e - 12 A, V t = 0.0258 V. When more accuracy is desired in modelling the diode's turn-on characteristic, the model can be enhanced by doubling-up the standard PWL-model.
Internal resistance causes "leveling off" of a real diode's I–V curve at high forward bias. The Shockley equation doesn't model this, but adding a resistance in series will. The reverse breakdown region (particularly of interest for Zener diodes) is not modeled by the Shockley equation.
Tunnel diodes and Gunn diodes are examples of components that have negative resistance. Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each ...
English: Diode I-V diagram. Includes three main areas of operation: breakdown, reverse-biased, and forward-biased. Vbr denotes the breakdown voltage, and Vd denotes the voltage that is typically considered "on" (conducting current).
It is a PNPN diode with alternating layers of P-type and N-type material. It is equivalent to a thyristor with a disconnected gate. Shockley diodes were manufactured and marketed by Shockley Semiconductor Laboratory in the late 1950s. The Shockley diode has a negative resistance characteristic. [1] It was largely superseded by the diac.
Electron and hole trapping in the Shockley-Read-Hall model. In the SRH model, four things can happen involving trap levels: [11] An electron in the conduction band can be trapped in an intragap state. An electron can be emitted into the conduction band from a trap level. A hole in the valence band can be captured by a trap.
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic ...
One version of Chua's circuit, where the nonlinear Chua's diode is synthesized by an op amp negative impedance converter (OPA1) and a diode–resistor network (D1, D2, both R2) An autonomous circuit made from standard components (resistors, capacitors, inductors) must satisfy three criteria before it can display chaotic behaviour. [3] It must ...