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ZnO is a semiconductor material with a wide band gap energy of 3.3eV and has the potential to be widely used on the nanoscale. ZnO nanostructures have found uses in environmental, technological and biomedical purposes including ultrafast optical functions, dye-sensitised solar cells , lithium-ion batteries , biosensors , nanolasers [ 2 ] and ...
ZnO is a wide-band gap semiconductor of the II-VI semiconductor group. The native doping of the semiconductor due to oxygen vacancies or zinc interstitials is n-type. [13] ZnO is a relatively soft material with approximate hardness of 4.5 on the Mohs scale. [12] Its elastic constants are smaller than those of relevant III-V semiconductors, such ...
In semiconductors, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the ...
ZnO is a wide-bandgap semiconductor with an energy gap of 3.37 eV at room temperature. [1] ZnO nanoparticles are believed to be one of the three most produced nanomaterials, along with titanium dioxide nanoparticles and silicon dioxide nanoparticles. [2] [3] [4] The most common use of ZnO nanoparticles is in sunscreen.
Diagram of the band gap plotted versus the lattice parameter a of the ternary alloy combinations of ZnO, CdO and MgO. Ternary compounds are one option to vary the band gap of semiconductors almost continuously over a wide energy range. This method is highly dependent on the materials as well as the growth techniques.
Ternary compositions allow adjusting the band gap within the range of the involved binary compounds; however, in case of combination of direct and indirect band gap materials there is a ratio where indirect band gap prevails, limiting the range usable for optoelectronics; e.g. AlGaAs LEDs are limited to 660 nm by this. Lattice constants of the ...
Band-gap engineering is the process of controlling or altering the band gap of a material by controlling the composition of certain semiconductor alloys, such as GaAlAs, InGaAs, and InAlAs. It is also possible to construct layered materials with alternating compositions by techniques like molecular-beam epitaxy.
Band-gap engineering is the process of controlling or altering the band gap of a material. This is typically done to semiconductors by controlling the composition of alloys, constructing layered materials with alternating compositions, or by inducing strain either epitaxially or topologically. A band gap is the range in a solid where no ...