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In Figure 2, a flyback diode was added in antiparallel with the solenoid. Instead of spiking to -300 V, the flyback diode only allows approximately -1.4 V of potential to be built up (-1.4 V is a combination of the forward bias of the 1N4007 diode (1.1 V) and the foot of wiring separating the diode and the solenoid [dubious – discuss]). The ...
1N4001 diode in DO-41 axial package (through hole mount) A schematic symbol for general-purpose silicon rectifier diodes Current-voltage characteristics of a 1N4001 at different temperatures The 1N400x (or 1N4001 or 1N4000 [ 1 ] ) series is a family of popular one- ampere general-purpose silicon rectifier diodes commonly used in AC adapters for ...
A fast diode is a faster-than-standard current rectifier.The terms "fast" and "ultrafast" are in comparison to standard rectifiers designed for low-frequency applications such as rectifying sinusoidal current supplied from the AC mains.
A transient-voltage-suppression diode can respond to over-voltages faster than other common over-voltage protection components such as varistors or gas discharge tubes. The actual clamping occurs in roughly one picosecond , but in a practical circuit the inductance of the wires leading to the device imposes a higher limit.
In electronics, a step recovery diode (SRD, snap-off diode or charge-storage diode or memory varactor [a]) is a semiconductor junction diode with the ability to generate extremely short pulses. It has a variety of uses in microwave (MHz to GHz range) electronics as pulse generator or parametric amplifier .
A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of ...
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
A Russian-made Gunn diode. A Gunn diode, also known as a transferred electron device (TED), is a form of diode, a two-terminal semiconductor electronic component, with negative differential resistance, used in high-frequency electronics. It is based on the "Gunn effect" discovered in 1962 by physicist J. B. Gunn.