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Basis of solid-state Blocking oscillator The waveform generated by this circuit This Joule thief circuit, a blocking oscillator, can be used in order to power a light-emitting diode from a 1.5V battery for a relatively long period of time, with the brightness being a tradeoff.
While standard silicon diodes have a forward voltage drop of about 0.7 V and germanium diodes 0.3 V, Schottky diodes' voltage drop at forward biases of around 1 mA is in the range of 0.15 V to 0.46 V (see the 1N5817 [6] and 1N5711 [7]), which makes them useful in voltage clamping applications and prevention of transistor saturation.
68 - Blocking Relay / Power Swing Blocking; 69 - Permissive Control Device; 70 - Rheostat; 71 - Liquid Switch, Level Switch; 72 - DC Circuit Breaker; 73 - Load-Resistor Contactor; 74 - Alarm Relay; 75 - Position Changing Mechanism; 76 - DC Overcurrent Relay; 77 - Telemetering Device, Speed Sensor; 78 - Phase Angle Measuring or Out-of-Step ...
Infrared diode: often changed to "D" for diode J: Jack (least-movable connector of a connector pair), jack connector (connector may have "male" pin contacts and/or "female" socket contacts) all types of connectors, including pin headers. JP: Jumper (link) K: Relay or contactor: L: Inductor or coil or ferrite bead: LD, LED: LED: often changed to ...
One possible drawback of this converter is that the switch does not have a terminal at ground; this complicates the driving circuitry. However, this drawback is of no consequence if the power supply is isolated from the load circuit (if, for example, the supply is a battery) because the supply and diode polarity can simply be reversed.
When a negative voltage is applied to the anode and a positive voltage to the cathode, the SCR is in reverse blocking mode, making J1 and J3 reverse biased and J2 forward biased. The device behaves as two diodes connected in series. A small leakage current flows. This is the reverse blocking mode.
A transient-voltage-suppression diode can respond to over-voltages faster than other common over-voltage protection components such as varistors or gas discharge tubes. The actual clamping occurs in roughly one picosecond , but in a practical circuit the inductance of the wires leading to the device imposes a higher limit.
The penalty isn't overly severe because at higher voltages, where IGBT usage dominates, discrete diodes have a significantly higher performance than the body diode of a MOSFET. The reverse bias rating of the N-drift region to collector P+ diode is usually only of tens of volts, so if the circuit application applies a reverse voltage to the IGBT ...