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The electron–hole pair is the fundamental unit of generation and recombination in inorganic semiconductors, corresponding to an electron transitioning between the valence band and the conduction band where generation of an electron is a transition from the valence band to the conduction band and recombination leads to a reverse transition.
The same goes for a hole moving in the opposite direction. It is easiest to understand how a current is generated when considering electron-hole pairs that are created in the depletion zone, which is where there is a strong electric field. The electron is pushed by this field toward the n side and the hole toward the p side.
When ionizing radiation strikes a semiconductor, it may excite an electron out of its energy level and consequently leave a hole. This process is known as electron-hole pair generation. Electron-hole pairs are constantly generated from thermal energy as well, in the absence of any external energy source. Electron-hole pairs are also apt to ...
A normally-bound electron (e.g., in a bond) in a reverse-biased diode may break loose due to a thermal fluctuation or excitation, creating a mobile electron-hole pair . If there is a voltage gradient (electric field) in the semiconductor, then the electron will move towards the positive voltage while the hole will move towards the negative voltage.
Pair production often refers specifically to a photon creating an electron–positron pair near a nucleus. As energy must be conserved, for pair production to occur, the incoming energy of the photon must be above a threshold of at least the total rest mass energy of the two particles created. (As the electron is the lightest, hence, lowest ...
An electron and electron hole (electron-hole pair) can recombine giving up their energy to an electron in the conduction band, increasing its energy. The reverse effect is known as impact ionization. The Auger effect can impact biological molecules such as DNA.
The device to be analyzed is biased using a constant current power supply. As the light source is scanned across the surface of the silicon, electron-hole pairs are generated. This causes subtle alterations of the operating characteristics of the device, which may result in slight changes to the power supply voltage.
Transmitted photons have the potential to give their energy, hν, to an electron if hν ≥ E g, generating an electron-hole pair. [13] In the depletion region, the drift electric field E drift accelerates both electrons and holes towards their respective n-doped and p-doped regions (up and down, respectively).