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  2. 1N400x rectifier diode - Wikipedia

    en.wikipedia.org/wiki/1N400x_rectifier_diode

    1N4001 diode in DO-41 axial package (through hole mount) A schematic symbol for general-purpose silicon rectifier diodes Current-voltage characteristics of a 1N4001 at different temperatures The 1N400x (or 1N4001 or 1N4000 [ 1 ] ) series is a family of popular one- ampere general-purpose silicon rectifier diodes commonly used in AC adapters for ...

  3. 1N4148 signal diode - Wikipedia

    en.wikipedia.org/wiki/1N4148_signal_diode

    Three 1N4148 diodes in glass DO-35 axial package. The black band on the right is the cathode side. Diode schematic symbol vs cathode marking on the package. The 1N4148 is a standard silicon switching signal diode. It is one of the most popular and long-lived switching diodes because of its dependable specifications and low cost.

  4. Doorbell - Wikipedia

    en.wikipedia.org/wiki/Doorbell

    Doorbell mechanism from 1884 in Andrássy Avenue, Budapest Antique mechanically operated shop doorbell on a torsion spring. William Murdoch, a Scottish inventor, installed a number of his own innovations in his house, built in Birmingham in 1817; one of these was a loud doorbell, that worked using a piped system of compressed air. [1]

  5. TO-66 - Wikipedia

    en.wikipedia.org/wiki/TO-66

    TO-213 is intended to replace previous definitions of flange-mounted packages with a 5.08 mm (0.200 in) pin spacing. [6] The different outlines are now defined as variants of TO-213: TO-66 is renamed to TO-213-AA, TO-123 to TO-213-AB, TO-124 to TO-213-AC.

  6. Glass-to-metal seal - Wikipedia

    en.wikipedia.org/wiki/Glass-to-metal_seal

    Uranium glass used as lead-in seals in a vacuum capacitor. Glass-to-metal seals are a type of mechanical seal which joins glass and metal surfaces. They are very important elements in the construction of vacuum tubes, electric discharge tubes, incandescent light bulbs, glass-encapsulated semiconductor diodes, reed switches, glass windows in metal cases, and metal or ceramic packages of ...

  7. Power semiconductor device - Wikipedia

    en.wikipedia.org/wiki/Power_semiconductor_device

    The major breakthrough in power semiconductor devices is expected from the replacement of silicon by a wide band-gap semiconductor. At the moment, silicon carbide (SiC) is considered to be the most promising. A SiC Schottky diode with a breakdown voltage of 1200 V is commercially available, as is a 1200 V JFET. As both are majority carrier ...