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Tyagi wrote one internationally acclaimed book Introduction to Semiconductor Materials and Devices, [5] which is widely used in Electrical Engineering, semiconductor devices and material science undergraduate and postgraduate courses. It was published by John Wiley & Sons on 7 March 1991. M. S. Tyagi: Introduction to Semiconductor Materials and ...
Sze worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University. [1] He is well known for his work in semiconductor physics and technology, including his 1967 invention (with Dawon Kahng) of the floating-gate transistor, [2] now widely used in non-volatile semiconductor memory devices.
The BARITT diode (barrier injection transit-time) is a high frequency semiconductor component of microelectronics. A related component is the DOVETT diode. The BARITT diode uses injection and transit-time properties of minority carriers to produce a negative resistance at microwave frequencies. About the biased forward boundary layer, the ...
Semiconductor device modeling creates models for the behavior of semiconductor devices based on fundamental physics, such as the doping profiles of the devices. It may also include the creation of compact models (such as the well known SPICE transistor models), which try to capture the electrical behavior of such devices but do not generally ...
The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. [1] (In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction.)
The wavelength of the light produced depends on the energy band gap of the semiconductors used. Since these materials have a high index of refraction, [note 1] design features of the devices such as special optical coatings and die shape are required to efficiently emit light. A LED is a long-lived light source, but certain mechanisms can cause ...
The semiconductor materials used in electronic devices are doped under precise conditions to control the concentration and regions of p- and n-type dopants. A single semiconductor device crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behavior.
An IMPATT diode (impact ionization avalanche transit-time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. They operate at frequencies of about 3 and 100 GHz, or higher.