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Scaling of isolation with transistor size. Isolation pitch is the sum of the transistor width and the trench isolation distance. As the isolation pitch shrinks, the narrow channel width effect becomes more apparent. The shallow trench isolation fabrication process of modern integrated circuits in cross-sections.
10. Using a conventional doping process, or a process called ion-implantation, the source, drain and the polysilicon are doped. The thin oxide under the silicon gate acts as a mask for the doping process. This step is what makes the gate self-aligning. The source and drain regions are automatically properly aligned with the (already in place ...
If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
In 1990, Peregrine Semiconductor began development of an SOI process technology utilizing a standard 0.5 μm CMOS node and an enhanced sapphire substrate. Its patented silicon on sapphire (SOS) process is widely used in high-performance RF applications. The intrinsic benefits of the insulating sapphire substrate allow for high isolation, high ...
LOCOS, short for LOCal Oxidation of Silicon, is a microfabrication process where silicon dioxide is formed in selected areas on a silicon wafer having the Si-SiO 2 interface at a lower point than the rest of the silicon surface. As of 2008 it was largely superseded by shallow trench isolation.
Cross-sectional view of a MOSFET type field-effect transistor, showing source, gate and drain terminals, and insulating oxide layer. The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET ...
Gate oxide at NPNP transistor made by Frosch and Derrick, 1957 [1]. The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on.
In most circuits, this means pulling an enhancement-mode MOSFET's gate voltage towards its drain voltage turns it on. In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example).