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An avalanche photodiode (APD) is a highly sensitive type of photodiode, which in general are semiconductor diodes that convert light into electricity via interband excitation coupled with impact ionization.
In some sense, impact ionization is the reverse process to Auger recombination. Avalanche photodiodes (APD) are used in optical receivers before the signal is given to the receiver circuitry the photon is multiplied with the photocurrent and this increases the sensitivity of the receiver since photocurrent is multiplied before encountering of ...
Commercial single-photon avalanche diode module for optical photons. A single-photon avalanche diode (SPAD), also called Geiger-mode avalanche photodiode [1] (G-APD or GM-APD [2]) is a solid-state photodetector within the same family as photodiodes and avalanche photodiodes (APDs), while also being fundamentally linked with basic diode behaviours.
In electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown.
Avalanche Photodiodes (APDs): APDs are specialized photodiodes that incorporate avalanche multiplication. They have a high electric field region near the PN junction, which causes impact ionization and produces additional electron-hole pairs. This internal amplification improves the detection sensitivity.
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An IMPATT diode (impact ionization avalanche transit-time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. They operate at frequencies of about 3 and 100 GHz, or higher.