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Impact ionization is the process in a material by which one energetic charge carrier can lose energy by the creation of other charge carriers. For example, in semiconductors , an electron (or hole ) with enough kinetic energy can knock a bound electron out of its bound state (in the valence band ) and promote it to a state in the conduction ...
is the ion current. To keep the discharge going on, free electrons must be created at the cathode surface. This is possible because the ions hitting the cathode release secondary electrons at the impact. (For very large applied voltages also field electron emission can occur.) Without field emission, we can write
Snapback is a mechanism in a bipolar transistor in which avalanche breakdown or impact ionization provides a sufficient base current to turn on the transistor. It is used intentionally in the design of certain ESD protection devices integrated onto semiconductor chips.
Electron ionization. Electron ionization (EI, formerly known as electron impact ionization [1] and electron bombardment ionization [2]) is an ionization method in which energetic electrons interact with solid or gas phase atoms or molecules to produce ions. [3] EI was one of the first ionization techniques developed for mass spectrometry. [4]
A high substrate current means a large number of created electron-hole pairs and thus an efficient Si-H bond breakage mechanism. When interface states are created, the threshold voltage is modified and the subthreshold slope is degraded. This leads to lower current, and degrades the operating frequency of integrated circuit.
For an electron multiplication device it is given by the hole impact ionization rate divided by the electron impact ionization rate. It is desirable to have a large asymmetry between these rates to minimize ENF( M ), since ENF( M ) is one of the main factors that limit, among other things, the best possible energy resolution obtainable.
An IMPATT diode (impact ionization avalanche transit-time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. They operate at frequencies of about 3 and 100 GHz, or higher.
The reverse effect is known as impact ionization. The Auger effect can impact biological molecules such as DNA. Following the K-shell ionization of the component atoms of DNA, Auger electrons are ejected leading to damage of its sugar-phosphate backbone. [4]