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A cubic silsesquioxane. A silsesquioxane is an organosilicon compound with the chemical formula [RSiO 3/2] n (R = H, alkyl, aryl, alkenyl or alkoxyl.). [1] Silsesquioxanes are colorless solids that adopt cage-like or polymeric structures with Si-O-Si linkages and tetrahedral Si vertices.
Grammatical abbreviations are generally written in full or small caps to visually distinguish them from the translations of lexical words. For instance, capital or small-cap PAST (frequently abbreviated to PST) glosses a grammatical past-tense morpheme, while lower-case 'past' would be a literal translation of a word with that meaning.
The “parent” planar molecule possessing D 3h symmetry has frontier orbitals of a 2 ” (HOMO) and a 1 ’ (LUMO) symmetries. The pyramidalizing vibration mode has symmetry a 2 ”. The triple product yields the totally symmetric representation a 1 ’, indicating that the molecule will indeed pyramidalize into C 3v symmetry.
ML −1 T −2: Internal Energy: U = J ML 2 T −2: Enthalpy: H = + J ML 2 T −2: Partition Function: Z: 1 1 Gibbs free energy: G = J ML 2 T −2: Chemical potential (of component i in a mixture) μ i
NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
Where two voltages are given below separated by "/", the first is the root-mean-square voltage between a phase and the neutral connector, whereas the second is the corresponding root-mean-square voltage between two phases (exception: the category shown below called "One Phase", where 240 V is the root-mean-square voltage between the two legs of a split phase).
Overdrive voltage, usually abbreviated as V OV, is typically referred to in the context of MOSFET transistors.The overdrive voltage is defined as the voltage between transistor gate and source (V GS) in excess of the threshold voltage (V TH) where V TH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity).
Return-to-zero, inverted (RZI) is a method of mapping for transmission. The two-level RZI signal has a pulse (shorter than a clock cycle) if the binary signal is 0, and no pulse if the binary signal is 1.