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Tyagi wrote one internationally acclaimed book Introduction to Semiconductor Materials and Devices, [5] which is widely used in Electrical Engineering, semiconductor devices and material science undergraduate and postgraduate courses. It was published by John Wiley & Sons on 7 March 1991. M. S. Tyagi: Introduction to Semiconductor Materials and ...
Sze worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University. [1] He is well known for his work in semiconductor physics and technology, including his 1967 invention (with Dawon Kahng) of the floating-gate transistor, [2] now widely used in non-volatile semiconductor memory devices.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators.
The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. [1] (In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction.)
Since these materials have a high index of refraction, [note 1] design features of the devices such as special optical coatings and die shape are required to efficiently emit light. A LED is a long-lived light source, but certain mechanisms can cause slow loss of efficiency of the device or sudden failure.
The semiconductor materials used in electronic devices are doped under precise conditions to control the concentration and regions of p- and n-type dopants. A single semiconductor device crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behavior.
A nanoscale vacuum-channel transistor (NVCT) is a transistor in which the electron transport medium is a vacuum, much like a vacuum tube.In a traditional solid-state transistor, a semiconductor channel exists between the source and the drain, and the current flows through the semiconductor.
The Transfer Length Method or the "Transmission Line Model" (both abbreviated as TLM) is a technique used in semiconductor physics and engineering to determine the specific contact resistivity between a metal and a semiconductor.