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When the finite size of a crystal is taken into account, the wavefunctions of electrons are altered and states that are forbidden within the bulk semiconductor gap are allowed at the surface. Similarly, when a metal is deposited onto a semiconductor (by thermal evaporation , for example), the wavefunction of an electron in the semiconductor ...
In an "indirect" gap, a photon cannot be emitted because the electron must pass through an intermediate state and transfer momentum to the crystal lattice. Examples of direct bandgap materials include hydrogenated amorphous silicon and some III–V materials such as InAs and GaAs. Indirect bandgap materials include crystalline silicon and Ge.
In a semiconductor or band insulator, the Fermi level is surrounded by a band gap, referred to as the band gap (to distinguish it from the other band gaps in the band structure). The closest band above the band gap is called the conduction band, and the closest band beneath the band gap is called the valence band.
In solid-state physics and solid-state chemistry, a band gap, also called a bandgap or energy gap, is an energy range in a solid where no electronic states exist. In graphs of the electronic band structure of solids, the band gap refers to the energy difference (often expressed in electronvolts ) between the top of the valence band and the ...
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states.
In undoped semiconductors the Fermi level lies in the middle of a forbidden band or band gap between two allowed bands called the valence band and the conduction band. The valence band, immediately below the forbidden band, is normally very nearly completely occupied. The conduction band, above the Fermi level, is normally nearly completely empty.
These states exist in the forbidden energy gap only and are therefore localized at the surface, similar to the picture given in figure 3. At energies where a surface and a bulk state are degenerate, the surface and the bulk state can mix, forming a surface resonance.
The interfaces of such heterojunctions can be categorized in three types: straddling gap (referred to as type I), staggered gap (type II), and broken gap (type III). These representations do not take into account the band bending, which is a reasonable assumption if you only look at the interface itself, as band bending exerts its influence on ...