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  2. p–n diode - Wikipedia

    en.wikipedia.org/wiki/P–n_diode

    Band-bending diagram for pn diode in forward bias. Diffusion drives carriers across the junction. Quasi-Fermi levels and carrier densities in forward biased pn-diode. The figure assumes recombination is confined to the regions where majority carrier concentration is near the bulk values, which is not accurate when recombination-generation ...

  3. Band diagram - Wikipedia

    en.wikipedia.org/wiki/Band_diagram

    Band diagram for pn junction at equilibrium. The depletion region is shaded. φ B denotes band shift for holes and charges level. See Pn diode. The inner workings of a light emitting diode, showing circuit (top) and band diagram when a bias voltage is applied (bottom).

  4. Band bending - Wikipedia

    en.wikipedia.org/wiki/Band_bending

    The p-n diode is a device that allows current to flow in only one direction as long as the applied voltage is below a certain threshold. When a forward bias is applied to the p-n junction of the diode the band gap in the depletion region is narrowed. The applied voltage introduces more charge carriers as well, which are able to diffuse across ...

  5. Carrier generation and recombination - Wikipedia

    en.wikipedia.org/wiki/Carrier_generation_and...

    Absorption is the active process in photodiodes, solar cells and other semiconductor photodetectors, while stimulated emission is the principle of operation in laser diodes. Besides light excitation, carriers in semiconductors can also be generated by an external electric field, for example in light-emitting diodes and transistors.

  6. p–n junction - Wikipedia

    en.wikipedia.org/wiki/P–n_junction

    The panels show energy band diagram, electric field, and net charge density. The built-in potential of the semiconductor varies, depending on the concentration of doping atoms. In this example, both p and n junctions are doped at a 1e15 cm −3 (160 μC/cm 3) doping level, leading to built-in potential of ~0.59 volts. Reducing depletion width ...

  7. Zener effect - Wikipedia

    en.wikipedia.org/wiki/Zener_effect

    In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...

  8. Current–voltage characteristic - Wikipedia

    en.wikipedia.org/wiki/Current–voltage...

    Tunnel diodes and Gunn diodes are examples of components that have negative resistance. Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each ...

  9. Light-emitting diode physics - Wikipedia

    en.wikipedia.org/wiki/Light-emitting_diode_physics

    The inner workings of an LED, showing circuit (top) and band diagram (bottom) The pn junction in any direct band gap material emits light when electric current flows through it. This is electroluminescence. Electrons cross from the n-region and recombine with the holes existing in the p-region.