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  2. Thin small outline package - Wikipedia

    en.wikipedia.org/wiki/Thin_small_outline_package

    The prime application for this technology is memory. SRAM , flash memory , FSRAM and E2PROM manufacturers find this package well suited to their end-use products. It answers the needs required by telecom, cellular, memory modules, PC cards (PCMCIA cards), wireless, netbooks and countless other product applications.

  3. Memory cell (computing) - Wikipedia

    en.wikipedia.org/wiki/Memory_cell_(computing)

    CMOS memory was commercialized by RCA, which launched a 288-bit CMOS SRAM memory chip in 1968. [23] CMOS memory was initially slower than NMOS memory, which was more widely used by computers in the 1970s. [24] In 1978, Hitachi introduced the twin-well CMOS process, with its HM6147 (4 kb SRAM) memory chip, manufactured with a 3 μm process. The ...

  4. Semiconductor memory - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_memory

    The memory cells are laid out in rectangular arrays on the surface of the chip. The 1-bit memory cells are grouped in small units called words which are accessed together as a single memory address. Memory is manufactured in word length that is usually a power of two, typically N=1, 2, 4 or 8 bits.

  5. Multi-level cell - Wikipedia

    en.wikipedia.org/wiki/Multi-level_cell

    SanDisk X4 flash memory cards, introduced in 2009, was one of the first products based on NAND memory that stores 4 bits per cell, commonly referred to as quad-level-cell (QLC), using 16 discrete charge levels (states) in each individual transistor. The QLC chips used in these memory cards were manufactured by Toshiba, SanDisk and SK Hynix. [30 ...

  6. NCR CRAM - Wikipedia

    en.wikipedia.org/wiki/NCR_CRAM

    CRAM, or Card Random-Access Memory, model 353-1, was a data storage device invented by NCR, which first appeared on their model NCR-315 mainframe computer in 1962. It was also available for NCR's third generation NCR Century series as the NCR/653-100. A CRAM cartridge contained 256 3x14 inch cards with a PET film magnetic recording surface ...

  7. Ferroelectric RAM - Wikipedia

    en.wikipedia.org/wiki/Ferroelectric_RAM

    The 1T-1C storage cell design in a FeRAM is similar in construction to the storage cell in DRAM, in that both cell types include one capacitor and one access transistor. In a DRAM cell capacitor, a linear dielectric is used, whereas in a FeRAM cell capacitor the dielectric structure includes ferroelectric material , typically lead zirconate ...

  8. Transistor model - Wikipedia

    en.wikipedia.org/wiki/Transistor_model

    Transistor models are used for almost all modern electronic design work. Analog circuit simulators such as SPICE use models to predict the behavior of a design. Most design work is related to integrated circuit designs which have a very large tooling cost, primarily for the photomasks used to create the devices, and there is a large economic incentive to get the design working without any ...

  9. IBM 1401 - Wikipedia

    en.wikipedia.org/wiki/IBM_1401

    Read a card stores the 80 columns of data from a card into memory locations 001–080. Index registers 1, 2 and 3 are in memory locations 087–089, 092-094 and 097-099 respectively. Punch a card punches the contents of memory locations 101-180 into a card. Write a line prints the contents of memory locations 201–332. The 1401's instruction ...

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    ashley barrett transistor model of memory card storage system manual 1 pdf