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Intel Core i7 and Intel Core i5 processors based on Intel's Broadwell 14 nm technology was launched in January 2015. [118] AMD Ryzen processors based on AMD's Zen or Zen+ architectures and which uses 14 nm FinFET technology. [119]
This is a list of emerging technologies, which are in-development technical innovations that have significant potential in their applications. The criteria for this list is that the technology must: Exist in some way; purely hypothetical technologies cannot be considered emerging and should be covered in the list of hypothetical technologies ...
For several years, the Semiconductor Industry Association (SIA) gave this responsibility of coordination to the United States, which led to the creation of an American style roadmap, the National Technology Roadmap for Semiconductors (NTRS). [5] The first semiconductor roadmap, published by the SIA in 1993.
The Micralign, which had "created the modern IC industry", was obsolete by the early 1980s. They were replaced by the new steppers, which used high magnifications and extremely powerful light sources to allow a large mask to be copied onto the wafer at ever-smaller sizes. This technology allowed the industry to break below the former 1 micron ...
The principle is applied in wirephoto and television technology for a short time. Selenium is used in light meters for the next 50 years. Cinématographe camera by the Lumière brothers in 1895 (ref 86.5822) at the French Museum of Photography in Bièvres, Essonne, France. 1895: Auguste Lumiere's cinematograph displays moving images for the ...
By 1960, magnetic core was the dominant memory technology, although there were still some new machines using drums and delay lines during the 1960s. Magnetic thin film and rod memory were used on some second-generation machines, but advances in core technology meant they remained niche players until semiconductor memory displaced both core and ...
The researchers found that recent advances in machine learning technology and "smarter home and transport options make it possible to easily track and manage a large share of individuals' emissions" and that feedback effective in engaging individuals to reduce their energy-related emissions and relevant new personalized apps could be designed.
In 2003, a research team at NEC fabricated the first MOSFETs with a channel length of 3 nm, using the PMOS and NMOS processes. [20] [21] In 2006, a team from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center, developed a 3 nm width multi-gate MOSFET, the world's smallest nanoelectronic device, based on gate-all-around technology.