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  2. B. Jayant Baliga - Wikipedia

    en.wikipedia.org/wiki/B._Jayant_Baliga

    Silicon Carbide Power Devices World Scientific Publishing Company 2006 978-981-256-605-8 5 Fundamentals of Power Semiconductor Devices Springer 2018 978-3319939872 6 The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor Elsevier 2022 978-0323999120 7 Modern Silicon Carbide Power Devices

  3. Silicon carbide - Wikipedia

    en.wikipedia.org/wiki/Silicon_carbide

    Silicon carbide (SiC), also known as carborundum (/ ˌ k ɑːr b ə ˈ r ʌ n d əm /), is a hard chemical compound containing silicon and carbon. A wide bandgap semiconductor , it occurs in nature as the extremely rare mineral moissanite , but has been mass-produced as a powder and crystal since 1893 for use as an abrasive .

  4. Power semiconductor device - Wikipedia

    en.wikipedia.org/wiki/Power_semiconductor_device

    The power MOSFET is the most common power device in the world, due to its low gate drive power, fast switching speed, and advanced paralleling capability. [16] It has a wide range of power electronic applications, such as portable information appliances , power integrated circuits, cell phones , notebook computers , and the communications ...

  5. Acheson process - Wikipedia

    en.wikipedia.org/wiki/Acheson_process

    Silicon carbide was a useful material in jewelry making due to its abrasive properties, and this was the first commercial application of the Acheson process. [ 3 ] In the 1940s, first the Manhattan Project and then the Soviet atomic bomb project adopted Acheson process for nuclear graphite manufacturing (see details there).

  6. List of semiconductor materials - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).

  7. Wolfspeed - Wikipedia

    en.wikipedia.org/wiki/Wolfspeed

    Wolfspeed, Inc. is an American developer and manufacturer of wide-bandgap semiconductors, focused on silicon carbide and gallium nitride materials and devices for power and radio frequency applications such as transportation, power supplies, power inverters, and wireless systems. The company was formerly named Cree, Inc. [1]

  8. Power module - Wikipedia

    en.wikipedia.org/wiki/Power_module

    A power module or power electronic module provides the physical containment for several power components, usually power semiconductor devices. These power semiconductors (so-called dies ) are typically soldered or sintered on a power electronic substrate that carries the power semiconductors, provides electrical and thermal contact and ...

  9. Moissanite - Wikipedia

    en.wikipedia.org/wiki/Moissanite

    High power silicon carbide electronic devices are expected to find use in the design of protection circuits used for motors, actuators, and energy storage or pulse power systems. [26] It also exhibits thermoluminescence, [27] making it useful in radiation dosimetry. [28]