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This velocity is a characteristic of the material and a strong function of doping or impurity levels and temperature. It is one of the key material and semiconductor device properties that determine a device such as a transistor's ultimate limit of speed of response and frequency.
The drift velocity, and resulting current, is characterized by the mobility; for details, see electron mobility (for solids) or electrical mobility (for a more general discussion). See drift–diffusion equation for the way that the drift current, diffusion current , and carrier generation and recombination are combined into a single equation.
The heat dissipation in integrated circuits problem has gained an increasing interest in recent years due to the miniaturization of semiconductor devices. The temperature increase becomes relevant for cases of relatively small-cross-sections wires, because such temperature increase may affect the normal behavior of semiconductor devices.
Velocity saturation greatly affects the voltage transfer characteristics of a field-effect transistor, which is the basic device used in most integrated circuits. If a semiconductor device enters velocity saturation, an increase in voltage applied to the device will not cause a linear increase in current as would be expected by Ohm's law ...
Electrical mobility is the ability of charged particles (such as electrons or protons) to move through a medium in response to an electric field that is pulling them. The separation of ions according to their mobility in gas phase is called ion mobility spectrometry , in liquid phase it is called electrophoresis .
In general, an electron will propagate randomly in a conductor at the Fermi velocity. [5] Free electrons in a conductor follow a random path. Without the presence of an electric field, the electrons have no net velocity. When a DC voltage is applied, the electron drift velocity will increase in speed proportionally to the strength of the ...
Electronic band structure of a semiconductor material. Like other solids, semiconductor materials have an electronic band structure determined by the crystal properties of the material. Energy distribution among electrons is described by the Fermi level and the temperature of the electrons.
Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes).This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.