Search results
Results From The WOW.Com Content Network
Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components. STI is generally used on CMOS process technology nodes of 250 nanometers and smaller.
The tool is used primarily for determining doping structures in silicon semiconductors. Deep and shallow profiles are shown in Figure 2. Figure 2 The shallow profile on the left, the deep profile on the right. Carrier concentration is plotted against depth. Regions with a net electron concentration are denoted as "n" (or n-type).
The technology used a 32 nm SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$130 to a $280 eight-core design. Ambarella Inc. announced the availability of the A7L system-on-a-chip circuit for digital still cameras, providing 1080p60 high-definition video capabilities in ...
In textbooks, channel length modulation in active mode usually is described using the Shichman–Hodges model, accurate only for old technology: [2] where = drain current, ′ = technology parameter sometimes called the transconductance coefficient, W, L = MOSFET width and length, = gate-to-source voltage, =threshold voltage, = drain-to-source voltage, =, and λ = channel-length modulation ...
A deep channel 1 + 5 ⁄ 8 in × 2 + 7 ⁄ 16 in (41 mm × 62 mm) version is also manufactured. The material used to form the channel is typically sheet metal with a thickness of 1.5 mm or 2.5 mm (12 or 14 gauge; 0.1046 inch or 0.0747 inch, respectively). [2] Types of channel
Channel-Link (C-Link) by National Semiconductor is a high-speed interface for cost-effectively transferring data at rates from 250 megabits/second to 6.4 gigabits/second over backplanes or cables. National Semiconductor introduced the first Channel-Link chipsets in the late 1990s to provide an alternative to continually widening data buses to ...
In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering , velocity saturation , quantum confinement and hot carrier degradation .
In computer networking, a Fibre Channel frame is the frame of the Fibre Channel protocol. [1] The basic building blocks of an FC connection are the frames. They contain the information to be transmitted (payload), the address of the source and destination ports and link control information. Frames are broadly categorized as Data frames; Link ...