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Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components. STI is generally used on CMOS process technology nodes of 250 nanometers and smaller.
The technology used a 32 nm SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$130 to a $280 eight-core design. Ambarella Inc. announced the availability of the A7L system-on-a-chip circuit for digital still cameras, providing 1080p60 high-definition video capabilities in ...
A deep channel 1 + 5 ⁄ 8 in × 2 + 7 ⁄ 16 in (41 mm × 62 mm) version is also manufactured. The material used to form the channel is typically sheet metal with a thickness of 1.5 mm or 2.5 mm (12 or 14 gauge; 0.1046 inch or 0.0747 inch, respectively). [2] Types of channel
The tool is used primarily for determining doping structures in silicon semiconductors. Deep and shallow profiles are shown in Figure 2. Figure 2 The shallow profile on the left, the deep profile on the right. Carrier concentration is plotted against depth. Regions with a net electron concentration are denoted as "n" (or n-type).
The structural channel is not used as much in construction as symmetrical beams, in part because its bending axis is not centered on the width of the flanges. If a load is applied equally across its top, the beam will tend to twist away from the web. This may not be a weak point or problem for a particular design, but is a factor to be ...
With a non-zero probability that the channel is in deep fade, the capacity of the slow-fading channel in strict sense is zero. However, it is possible to determine the largest value of R {\displaystyle R} such that the outage probability p o u t {\displaystyle p_{out}} is less than ϵ {\displaystyle \epsilon } .
Microchannel in microtechnology is a channel with a hydraulic diameter below 1 mm, usually 1–99 μm. [1] Microchannels are used in fluid control (see Microfluidics), heat transfer (see Micro heat exchanger) and cell migration observation. [2]
In semiconductor device fabrication, channel-stopper or channel-stop is an area in semiconductor devices produced by implantation or diffusion of ions, by growing or patterning the silicon oxide, or other isolation methods in semiconductor material with the primary function to limit the spread of the channel area or to prevent the formation of parasitic channels (inversion layers).