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Metal-oxide varistor manufactured by Siemens & Halske AG. Modern varistor schematic symbol, which is the same as a thermistor symbol [1]. A varistor (a.k.a. voltage-dependent resistor (VDR)) is a surge protecting electronic component with an electrical resistance that varies with the applied voltage. [2]
In certain materials like ferric oxide (Fe 2 O 3) with titanium (Ti) doping an n-type semiconductor is formed and the charge carriers are electrons. In materials such as nickel oxide (NiO) with lithium (Li) doping a p-type semiconductor is created, where holes are the charge carriers. [14] This is described in the formula
Surge Protection Device (SPD) for installation in a low-voltage distribution board. A surge protector (or spike suppressor, surge suppressor, surge diverter, [1] surge protection device (SPD), transient voltage suppressor (TVS) or transient voltage surge suppressor (TVSS)) is an appliance or device intended to protect electrical devices in alternating current (AC) circuits from voltage spikes ...
A depletion-load NMOS NAND gate. In integrated circuits, depletion-load NMOS is a form of digital logic family that uses only a single power supply voltage, unlike earlier NMOS (n-type metal-oxide semiconductor) logic families that needed more than one different power supply voltage.
In some DC circuits, a varistor made of inexpensive metal oxide, called a metal oxide varistor (MOV) is used. They may be unipolar or bipolar, like two inverse-series silicon Zener diodes, but are prone to wear out after about a dozen max-rated joules of energy absorption such as lightning protection, but are suitable for lower energy.
These are designed to tolerate large surge currents for the suppression of overvoltage transients. In many applications this function is now served by metal oxide varistors (MOVs), particularly for trapping voltage transients on the power mains.
MOS stands for metal-oxide-semiconductor, reflecting the way MOS-transistors were originally constructed, predominantly before the 1970s, with gates of metal, typically aluminium. Since around 1970, however, most MOS circuits have used self-aligned gates made of polycrystalline silicon , a technology first developed by Federico Faggin at ...
PMOS uses p-channel (+) metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other digital circuits. PMOS transistors operate by creating an inversion layer in an n-type transistor body. This inversion layer, called the p-channel, can conduct holes between p-type "source" and "drain" terminals.