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A 2N3904 (lower left) in a TO-92 package on a breadboard The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [ 1 ] [ 2 ] [ 3 ] It is designed for low current and power , medium voltage , and can operate at moderately high speeds.
The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
The 2N3904 is an NPN transistor that can only switch one-third the current of the 2N2222 but has otherwise similar characteristics. The 2N3904 exhibits its forward gain (beta) peak at a lower current than the 2N2222, and is useful in amplifier applications with reduced I c, e.g., (gain peak at 10 mA for the 2N3904 but 150 mA for the 2N2222).
All types have a maximum collector current of 100 mA, except that the original Philips tentative data dated 4.4.1966 specified a maximum collector current of 100 mA peak (I CM) for the BC107/8/9, and Telefunken originally specified a maximum collector current of 50 mA for the BC109, but since at least 1973 all have revised collector currents of 100 mA average or 200 mA peak, except that the ...
The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948, [12] was for three decades the device of choice in the design of discrete and integrated circuits. Nowadays, the use of the BJT has declined in favor of CMOS technology in the design of digital integrated circuits.
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width , thereby decreasing the width of the charge carrier portion of ...
Full hybrid-pi model. The full model introduces the virtual terminal, B′, so that the base spreading resistance, r bb, (the bulk resistance between the base contact and the active region of the base under the emitter) and r b′e (representing the base current required to make up for recombination of minority carriers in the base region) can be represented separately.
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]