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The MOSFET, also known as the MOS transistor, was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. [46] It revolutionized the wider electronics industry , [ 85 ] including power electronics , [ 86 ] consumer electronics , control systems, and computers . [ 87 ]
Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, ... 1970 10,000 nm: ... circuits (ICs ...
Designers predominantly used MOSFET transistors with pMOS logic in the early 1970s, switching to nMOS logic after the mid-1970s. nMOS had the advantage that it could run on a single voltage, typically +5V, which simplified the power supply requirements and allowed it to be easily interfaced with the wide variety of +5V transistor-transistor ...
The MOSFET is by far the most common transistor in digital circuits, as billions may be included in a memory chip or microprocessor. As MOSFETs can be made with either p-type or n-type semiconductors, complementary pairs of MOS transistors can be used to make switching circuits with very low power consumption, in the form of CMOS logic .
PMOS uses p-channel (+) metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other digital circuits. PMOS transistors operate by creating an inversion layer in an n-type transistor body. This inversion layer, called the p-channel, can conduct holes between p-type "source" and "drain" terminals.
In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits.
The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [1] Its numbering follows the JEDEC standard. [2] It is a transistor type of enduring popularity. [3] [4] [5]
It is a special type of MOSFET (metal–oxide–semiconductor field-effect transistor), [1] and shares the same basic structure, but with the metal gate replaced by an ion-sensitive membrane, electrolyte solution and reference electrode. [2] Invented in 1970, the ISFET was the first biosensor FET (BioFET). The schematic view of an ISFET.