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Bipolar transistors, and particularly power transistors, have long base-storage times when they are driven into saturation; the base storage limits turn-off time in switching applications. A Baker clamp can prevent the transistor from heavily saturating, which reduces the amount of charge stored in the base and thus improves switching time.
The IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.
In electronics, emitter-coupled logic (ECL) is a high-speed integrated circuit bipolar transistor logic family. ECL uses an overdriven bipolar junction transistor (BJT) differential amplifier with single-ended input and limited emitter current to avoid the saturated (fully on) region of operation and the resulting slow turn-off behavior. [2]
The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz .
Transistor–transistor logic uses bipolar transistors to form its integrated circuits. [12] TTL has changed significantly over the years, with newer versions replacing the older types. Since the transistors of a standard TTL gate are saturated switches, minority carrier storage time in each junction limits the switching speed of the device.