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An example of Electron beam lithograph setup. Electron-beam lithography (often abbreviated as e-beam lithography or EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). [1]
Electron-beam machining is a process in which high-velocity electrons are concentrated into a narrow beam with a very high planar power density. The beam cross-section is then focused and directed toward the work piece, creating heat and vaporizing the material. Electron-beam machining can be used to accurately cut or bore a wide variety of metals.
The most accurate and expensive masks are those created by electron-beam lithography, which provides resolutions as fine as 0.1 μm in resist 4 μm thick and 3 μm features in resist 20 μm thick. An intermediate method is the plated photomask, which provides 3-μm resolution and can be outsourced at a cost on the order of $1000 per mask.
Depending on the resist various methods can be used, such as Extreme ultraviolet lithography - EUVL or Electron beam lithography - EBL. The photoresist is removed in the areas, where the target material is to be located, creating an inverse pattern.) Target material (usually a thin metal layer) is deposited (on the whole surface of the wafer).
Optical Lithography (or photolithography) is one of the most important and prevalent sets of techniques in the nanolithography field. Optical lithography contains several important derivative techniques, all that use very short light wavelengths in order to change the solubility of certain molecules, causing them to wash away in solution, leaving behind a desired structure.
Electron beam lithography, using a steerable electron beam. Nanoimprinting; Interference lithography; Magnetolithography; Scanning probe lithography; Surface-charge lithography [3] Diffraction lithography [4] These processes differ in speed and cost, as well as in the material they can be applied to and the range of feature sizes they can produce.
Excimer laser lithography has thus played a critical role in the continued advance of the so-called Moore's law for the last 25 years. [31] By around 2020, extreme ultraviolet lithography (EUV) has started to replace excimer laser lithography to further improve the resolution of the semiconductor circuits lithography process. [32]
Electron beam lithography (often abbreviated as e-beam lithography) is the practice of scanning a beam of electrons in a patterned fashion across a surface covered with a film (called the resist), [16] ("exposing" the resist) and of selectively removing either exposed or non-exposed regions of the resist ("developing").