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FlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. . This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last fl
The following is a list of CMOS 4000-series digital logic integrated circuits.In 1968, the original 4000-series was introduced by RCA.Although more recent parts are considerably faster, the 4000 devices operate over a wide power supply range (3V to 18V recommended range for "B" series) and are well suited to unregulated battery powered applications and interfacing with sensitive analogue ...
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example). For N-type depletion-load devices, the threshold voltage might be about −3 V, so it could be turned off by pulling the gate 3 V negative (the drain, by ...
Metal–oxide–semiconductor field-effect transistor (MOSFET), showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern ...
A dual-gate MOSFET often functions as a "one-transistor" cascode [citation needed]. Common in the front ends of sensitive VHF receivers, a dual-gate MOSFET is operated as a common-source amplifier with the primary gate (usually designated "gate 1" by MOSFET manufacturers) connected to the input and the second gate grounded (bypassed ...
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
The "V" shape of the MOSFET's gate allows the device to deliver a higher amount of current from the source to the drain of the device. The shape of the depletion region creates a wider channel, allowing more current to flow through it. During operation in blocking mode, the highest electric field occurs at the N + /p + junction.