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  2. Ion implantation - Wikipedia

    en.wikipedia.org/wiki/Ion_implantation

    Ion implantation setup with mass separator. Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy or using radiofrequency, and a target chamber, where the ions impinge on a target, which is the material to be implanted.

  3. Plasma-immersion ion implantation - Wikipedia

    en.wikipedia.org/wiki/Plasma-immersion_ion...

    PIII-process with ECR-plasma source and magnetron. Plasma-immersion ion implantation (PIII) [1] or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to ...

  4. Particle therapy - Wikipedia

    en.wikipedia.org/wiki/Particle_therapy

    Carbon ion therapy (C-ion RT) was pioneered at the National Institute of Radiological Sciences (NIRS) in Chiba, Japan, which began treating patients with carbon ion beams in 1994. This facility was the first to utilize carbon ions clinically, marking a significant advancement in particle therapy for cancer treatment.

  5. Proton therapy - Wikipedia

    en.wikipedia.org/wiki/Proton_therapy

    In medicine, proton therapy, or proton radiotherapy, is a type of particle therapy that uses a beam of protons to irradiate diseased tissue, most often to treat cancer.The chief advantage of proton therapy over other types of external beam radiotherapy is that the dose of protons is deposited over a narrow range of depth; hence in minimal entry, exit, or scattered radiation dose to healthy ...

  6. Ion beam mixing - Wikipedia

    en.wikipedia.org/wiki/Ion_Beam_Mixing

    Ion beam mixing can be further enhanced by heat spike effects [4] Ion mixing (IM) is essentially similar in result to interdiffusion, hence most models of ion mixing involve an effective diffusion coefficient that is used to characterize thickness of the reacted layer as a function of ion beam implantation over a period of time. [3]

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