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  2. Transient recovery voltage - Wikipedia

    en.wikipedia.org/wiki/Transient_Recovery_Voltage

    Examples of TRV waveshapes. A transient recovery voltage (TRV) for high-voltage circuit breakers is the voltage that appears across the terminals after current interruption. It is a critical parameter for fault interruption by a high-voltage circuit breaker, its characteristics (amplitude, rate of rise) can lead either to a successful current interruption or to a failure (called reignition or ...

  3. Reference designator - Wikipedia

    en.wikipedia.org/wiki/Reference_designator

    A reference designator unambiguously identifies the location of a component within an electrical schematic or on a printed circuit board.The reference designator usually consists of one or two letters followed by a number, e.g. C3, D1, R4, U15.

  4. Common collector - Wikipedia

    en.wikipedia.org/wiki/Common_collector

    Figure 1: Basic NPN common collector circuit (neglecting biasing details).. In electronics, a common collector amplifier (also known as an emitter follower) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer.

  5. Electronic component - Wikipedia

    en.wikipedia.org/wiki/Electronic_component

    Circuit breaker – resettable fuse in the form of a mechanical switch; Resettable fuse or PolySwitch – circuit breaker action using solid state device; Ground-fault protection or residual-current device – circuit breaker sensitive to mains currents passing to ground; Metal oxide varistor (MOV), surge absorber, TVS – Over-voltage protection

  6. BC548 - Wikipedia

    en.wikipedia.org/wiki/BC548

    The BC548 is a part of a family of NPN and PNP epitaxial silicon transistors that originated with the metal-cased BC108 family of transistors.The BC548 is the modern plastic-packaged BC108; [6] the BC548 article at the Radiomuseum website [7] describes the BC548 as a successor to the BC238 and differing from the BC108 in only the shape of the package.

  7. Time-dependent gate oxide breakdown - Wikipedia

    en.wikipedia.org/wiki/Time-dependent_gate_oxide...

    Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposed to immediate breakdown, which is caused by strong electric field).