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  2. Bipolar transistor biasing - Wikipedia

    en.wikipedia.org/wiki/Bipolar_transistor_biasing

    A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.

  3. Common source - Wikipedia

    en.wikipedia.org/wiki/Common_source

    Figure 1: Basic N-channel JFET common-source circuit (neglecting biasing details). Figure 2: Basic N-channel JFET common-source circuit with source degeneration. In electronics, a common-source amplifier is one of three basic single-stage field-effect transistor (FET) amplifier topologies, typically used as a voltage or transconductance amplifier.

  4. Threshold voltage - Wikipedia

    en.wikipedia.org/wiki/Threshold_voltage

    When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. [ 1 ] [ 2 ] This is somewhat confusing since pinch off applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behavior under high source–drain bias ...

  5. Depletion and enhancement modes - Wikipedia

    en.wikipedia.org/wiki/Depletion_and_enhancement...

    Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown. In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage.

  6. JFET - Wikipedia

    en.wikipedia.org/wiki/JFET

    Following Shockley's theoretical treatment on JFET in 1952, a working practical JFET was made in 1953 by George C. Dacey and Ian M. Ross. [4] Japanese engineers Jun-ichi Nishizawa and Y. Watanabe applied for a patent for a similar device in 1950 termed static induction transistor (SIT). The SIT is a type of JFET with a short channel. [4]

  7. Channel length modulation - Wikipedia

    en.wikipedia.org/wiki/Channel_length_modulation

    Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. It is one of several short-channel effects in MOSFET scaling.

  8. Cascode - Wikipedia

    en.wikipedia.org/wiki/Cascode

    The use of a cascode (sometimes verbified to cascoding) is a common technique for improving analog circuit performance, applicable to both vacuum tubes and transistors.The name "cascode" was coined in an article written by Frederick Vinton Hunt and Roger Wayne Hickman in 1939, in a discussion on the application of voltage stabilizers. [3]

  9. Early effect - Wikipedia

    en.wikipedia.org/wiki/Early_effect

    Figure 1. Top: NPN base width for low collector–base reverse bias; Bottom: narrower NPN base width for large collector–base reverse bias. Hashed areas are depleted regions. 2. The Early voltage (V A) as seen in the output-characteristic plot of a BJT. The Early effect, named after its discoverer James M.