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Jan Czochralski (Polish pronunciation: [ˈjan t͡ʂɔˈxralskʲi]; 23 October 1885 – 22 April 1953) was a Polish chemist who invented the Czochralski method, which is used for growing single crystals and in the production of semiconductor wafers.
The method is named after Polish scientist Jan Czochralski, [1] who invented the method in 1915 while investigating the crystallization rates of metals. [2] He made this discovery by accident: instead of dipping his pen into his inkwell, he dipped it in molten tin, and drew a tin filament, which later proved to be a single crystal. [3]
Jan Czochralski is credited with inventing the Czochralski method. Drzewiecki in 1884 built the first submarine with electric battery-powered propulsion. Kazimierz Fajans discovered protactinium in 1913. Hilary Koprowski developed the world's first effective live polio vaccine.
1918 - Jan Czochralski produces a method to grow single crystals of metal. Decades later, the method is adapted to produce single-crystal silicon. 1921 - Einstein awarded the Nobel Prize in Physics for his work on the photoelectric effect.
The Czochralski method. Wafers are formed of highly pure, [6] nearly defect-free single crystalline material, with a purity of 99.9999999% or higher. [6] One process for forming crystalline wafers is known as the Czochralski method, invented by Polish chemist Jan Czochralski.
1916 – Method for growing single crystals of metals invented by Jan Czochralski; 1919 – The merchant ship Fullagar has the first all welded hull. 1924 – Pyrex invented by scientists at Corning Incorporated, a glass with a very low coefficient of thermal expansion
Sidolówka was first produced in Warsaw in 1942, by the professors of the Warsaw University of Technology under the leadership of Jan Czochralski. It was partially based on an earlier design of the Filipinka grenade, also of underground construction, which in turn was based on a pre-war Polish ET-38 anti-tank grenade.
Its most significant setback came in 1917, when Jan Czochralski introduced the Czochralski process, which has found numerous applications in the semiconductor industry, where a much higher quality of crystals is required than the Verneuil process can produce