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An IMPATT diode (impact ionization avalanche transit-time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. They operate at frequencies of about 3 and 100 GHz, or higher.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators.
The semiconductor materials used in electronic devices are doped under precise conditions to control the concentration and regions of p- and n-type dopants. A single semiconductor device crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behavior.
The first solid-state power semiconductor devices were copper oxide rectifiers, used in early battery chargers and power supplies for radio equipment, announced in 1927 by L.O. Grundahl and P. H. Geiger. [2] The first germanium power semiconductor device appeared in 1952 with the introduction of the power diode by R.N. Hall.
The semiconductor industry is the aggregate of companies engaged in the design and fabrication of semiconductors and semiconductor devices, such as transistors and integrated circuits. Its roots can be traced to the invention of the transistor by Shockley , Brattain , and Bardeen at Bell Labs in 1948.
The underlying cause of this variability is that many semiconductor devices are highly sensitive to uncontrollable random variances in the process. Slight changes to the amount of diffusion time, uneven doping levels, etc. can have large effects on device properties. Some design techniques used to reduce the effects of the device variation are ...
The next era began following the publication of "Introduction to VLSI Systems" by Carver Mead and Lynn Conway in 1980, [4] and is considered the standard textbook for chip design. [5] The result was an increase in the complexity of the chips that could be designed, with improved access to design verification tools that used logic simulation ...
An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8] [9] [10] SOI MOSFET devices are adapted for use by the computer industry.