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The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America.
Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography.
Wafer carriers or cassettes, which can hold several wafers at once, were developed to carry several wafers between process steps, but wafers had to be individually removed from the carrier, processed and returned to the carrier, so acid-resistant carriers were developed to eliminate this time consuming process, so the entire cassette with ...
Wafer fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits on semiconductor wafers in a semiconductor device fabrication process. Examples include production of radio frequency amplifiers, LEDs, optical computer components, and microprocessors for computers. Wafer ...
Oxidation of silicon is a common and frequent step in the manufacture of integrated circuits (IC). The goal of oxidation is to grow a high quality, uniform oxide layer on a silicon substrate. During oxidation, a chemical reaction between the oxidants and the silicon atoms produces a layer of oxide on the silicon surface of the wafer.
The resulting mixture is used to clean organic residues off substrates, for example silicon wafers. [1] Because the mixture is a strong oxidizing agent , it will decompose most organic matter , and it will also hydroxylate most surfaces (by adding –OH groups), making them highly hydrophilic (water-compatible).
Surface activated bonding (SAB) is a non-high-temperature wafer bonding technology with atomically clean and activated surfaces. Surface activation prior to bonding by using fast atom bombardment is typically employed to clean the surfaces.
The procedural steps of the direct bonding process of wafers any surface is divided into wafer preprocessing, pre-bonding at room temperature and; annealing at elevated temperatures. Even though direct bonding as a wafer bonding technique is able to process nearly all materials, silicon is the most established material up to now. Therefore, the ...