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Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating-gate MOSFETs. They differ at the circuit level depending on ...
Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology , but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical ...
Usually, flash memory controllers also include the "flash translation layer" (FTL), a layer below the file system that maps host side or file system logical block addresses (LBAs) to the physical address of the flash memory (logical-to-physical mapping). The LBAs refer to sector numbers and to a mapping unit of 512 bytes.
This is the structure of a flash memory cell. Captions. English. Add a one-line explanation of what this file represents. Items portrayed in this file depicts ...
The storage element of the DRAM memory cell is the capacitor labeled (4) in the diagram above. The charge stored in the capacitor degrades over time, so its value must be refreshed (read and rewritten) periodically. The nMOS transistor (3) acts as a gate to allow reading or writing when open or storing when closed. [37]
Packages the flash memory, currently soldered in shipping smartphones, into a removable card form factor. Uses the SCSI command set including queuing. The electrical interface makes use of differential signaling , which enables high bus speeds and robustness under noisy conditions and reduced pin count (compared to parallel bus alternatives ...
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Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per cell. Most types of semiconductor memory have the property of random access , [ 4 ] which means that it takes the same amount of time to access any memory location, so data can be efficiently ...