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Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
Blood doping is a form of doping in which the number of red blood cells in the bloodstream is boosted in order to enhance athletic performance. Because such blood cells carry oxygen from the lungs to the muscles , a higher concentration in the blood can improve an athlete's aerobic capacity (VO 2 max) and endurance . [ 1 ]
Ion implantation setup with mass separator. Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy or using radiofrequency, and a target chamber, where the ions impinge on a target, which is the material to be implanted.
Dopant activation is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host. [1] The term is often restricted to the application of thermal energy following the ion implantation of dopants.
The molten zone carries the impurities away with it and hence reduces impurity concentration (most impurities are more soluble in the melt than the crystal). Specialized doping techniques like core doping, pill doping, gas doping and neutron transmutation doping are used to incorporate a uniform concentration of desirable impurity.
Monolayer doping (MLD) in semiconductor production is a well controlled, wafer-scale surface doping technique first developed at the University of California, Berkeley, in 2007. [1] This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially at nanoscale , which is not easily obtained by other ...
In October 1999, the USOC launched USADA and operations began on October 1, 2000. In 2003, one of USADA's first major undertakings was the revision of the then-current United States anti-doping policies in order to bring them into compliance with the newly adopted World Anti-Doping Code. [8]
An abrupt (i.e. behaving like a step function) p–n diode made by doping silicon. Here, the operation of the abrupt p–n diode is considered. By "abrupt", it is meant that the p- and n-type doping exhibit a step function discontinuity at the plane where they encounter each other. The objective is to explain the various bias regimes in the ...