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Another type of tunnel diode is a metal-insulator-insulator-metal (MIIM) diode, where an additional insulator layer allows "step tunneling" for more precise control of the diode. [11] There is also a metal-insulator-metal (MIM) diode, but due to inherent sensitivities, its present application appears to be limited to research environments.
For example, I–V data can be used to study anomalies, locate maximum or minimum curve slopes, and perform reliability analyses. A typical application is finding a semiconductor diode's reverse bias leakage current and doing forward and reverse bias voltage sweeps and current measurements to generate its I–V curve. [3]
An even simpler model of the diode, sometimes used in switching applications, is short circuit for forward voltages and open circuit for reverse voltages. The model of a forward biased pn junction having an approximately constant 0.7V is also a much used approximation for transistor base-emitter junction voltage in amplifier design.
The Shockley diode equation, or the diode law, named after transistor co-inventor William Shockley of Bell Labs, models the exponential current–voltage (I–V) relationship of semiconductor diodes in moderate constant current forward bias or reverse bias:
The negative peaks of the AC waveform are "clamped" to 0 V (actually −V F, the small forward bias voltage of the diode) by the diode, therefore the positive peaks of the output waveform are 2V pk. The peak-to-peak ripple is an enormous 2 V pk and cannot be smoothed unless the circuit is effectively turned into one of the more sophisticated ...
A graphical representation of the current and voltage properties of a transistor; the bias is selected so that the operating point permits maximum signal amplitude without distortion. In electronics, biasing is the setting of DC (direct current) operating conditions (current and voltage) of an electronic component that processes time-varying ...
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