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The heat dissipation in integrated circuits problem has gained an increasing interest in recent years due to the miniaturization of semiconductor devices. The temperature increase becomes relevant for cases of relatively small-cross-sections wires, because such temperature increase may affect the normal behavior of semiconductor devices.
The typical efficiency of TEGs is around 5–8%, although it can be higher. Older devices used bimetallic junctions and were bulky. More recent devices use highly doped semiconductors made from bismuth telluride (Bi 2 Te 3), lead telluride (PbTe), [10] calcium manganese oxide (Ca 2 Mn 3 O 8), [11] [12] or combinations thereof, [13] depending on application temperature.
At the atomic scale, a temperature gradient causes charge carriers in the material to diffuse from the hot side to the cold side. This is due to charge carrier particles having higher mean velocities (and thus kinetic energy) at higher temperatures, leading them to migrate on average towards the colder side, in the process carrying heat across the material.
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.
At absolute zero temperature, all of the electrons have energy below the Fermi level; but at non-zero temperatures the energy levels are filled following a Fermi-Dirac distribution. In undoped semiconductors the Fermi level lies in the middle of a forbidden band or band gap between two allowed bands called the valence band and the conduction ...
The term "hot electron" comes from the effective temperature term used when modelling carrier density (i.e., with a Fermi-Dirac function) and does not refer to the bulk temperature of the semiconductor (which can be physically cold, although the warmer it is, the higher the population of hot electrons it will contain all else being equal).
Different semiconductor packages may have different die orientations, different copper(or other metal) mass surrounding the die, different die attach mechanics, and different molding thickness, all of which could yield significantly different junction to case or junction to ambient resistance values, and could thus obscure overall efficiency ...
Junction temperature, short for transistor junction temperature, [1] is the highest operating temperature of the actual semiconductor in an electronic device. In operation, it is higher than case temperature and the temperature of the part's exterior.