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Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .
To date, the only such system to enter widespread production is ferroelectric RAM, or F-RAM (sometimes referred to as FeRAM).F-RAM is a random-access memory similar in construction to DRAM but (instead of a dielectric layer like in DRAM) contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O 3], commonly referred to as PZT.
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a form of random-access memory similar in construction to DRAM, both use a capacitor and transistor but instead of using a simple dielectric layer the capacitor, an F-RAM cell contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O 3], commonly referred to as PZT. The Zr/Ti atoms in ...
To date, the only similar system to enter widespread production is ferroelectric RAM, or F-RAM (sometimes referred to as FeRAM). Also seeing renewed interest are silicon-oxide-nitride-oxide-silicon memory and ReRAM. 3D XPoint has also been in development, but is known to have a higher power budget than DRAM. [23]
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
The RIM-116 Rolling Airframe Missile (RAM) is a small, lightweight, infrared homing surface-to-air missile in use by the German, Japanese, Greek, Turkish, South Korean, Saudi Arabian, Egyptian, Mexican, UAE, and United States navies. It was originally intended and used primarily as a point-defense weapon against anti-ship missiles.
FeRAM adds a small amount of a ferro-electric material to a DRAM cell. The state of the field in the material encodes the bit in a non-destructive format. FeRAM has advantages of NRAM, although the smallest possible cell size is much larger than for NRAM. FeRAM is used in applications where the limited number of writes of flash is an issue.
A ferroelectric field-effect transistor (Fe FET) is a type of field-effect transistor that includes a ferroelectric material sandwiched between the gate electrode and source-drain conduction region of the device (the channel).