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A typical example of the use of a common-emitter amplifier is shown in Figure 3. Figure 3: Single-ended npn common-emitter amplifier with emitter degeneration. The AC-coupled circuit acts as a level-shifter amplifier. Here, the base–emitter voltage drop is assumed to be 0.65 volts.
Figure 1: Basic NPN common collector circuit (neglecting biasing details).. In electronics, a common collector amplifier (also known as an emitter follower) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer.
The amplifier can be approximated as unilateral when neglect of r O is accurate (valid for low gains and low to moderate load resistances), simplifying the analysis. This approximation often is made in discrete designs, but may be less accurate in RF circuits, and in integrated-circuit designs, where active loads normally are used.
The result is that the BJT makes a good switch that is controlled by its base input. The BJT also makes a good amplifier, since it can multiply a weak input signal to about 100 times its original strength. Networks of BJTs are used to make powerful amplifiers with many different applications. In the discussion below, focus is on the NPN BJT.
Fig. 4 Top: Small-signal BJT cascode using hybrid-pi model Bottom: Equivalent circuit for BJT cascode using amplifier low-frequency parameters. The g-parameters found in the above formulas can be used to construct a small-signal voltage amplifier with the same gain, input and output resistance as the original cascode (an equivalent circuit).
In analog amplifiers this curtailment of frequency response is a major implication of the Miller effect. In this example, the frequency ω 3dB such that ω 3dB C M R A = 1 marks the end of the low-frequency response region and sets the bandwidth or cutoff frequency of the amplifier.
A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width , thereby decreasing the width of the charge carrier portion of ...