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A gated SR latch circuit diagram constructed from AND gates (on left) and NOR gates (on right) A gated SR latch can be made by adding a second level of NAND gates to an inverted SR latch. The extra NAND gates further invert the inputs so a SR latch becomes a gated SR latch (a SR latch would transform into a gated SR latch with inverted enable).
Active-low SR latch symbol, but lacks /Q output See also: Set-Reset latch A 555 timer can act as an active-low SR latch (though without an inverted Q output) with two outputs: output pin is a push-pull output, discharge pin is an open-collector output (requires a pull-up resistor ).
A simple example of metastability can be found in an SR NOR latch, when both Set and Reset inputs are true (R=1 and S=1) and then both transition to false (R=0 and S=0) at about the same time. Both outputs Q and Q are initially held at 0 by the simultaneous Set and Reset inputs.
"A synchronous SR latch (sometimes clocked SR flip-flop) can be made by adding a second level of NAND gates to the inverted SR latch (or a second level of NOR gates to the direct SR latch)." The description does not match the circuit shown below. There are no NAND gates anywhere. A gated SR latch circuit diagram constructed from NOR gates.
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Common circuit diagram symbols (US ANSI symbols) An electronic symbol is a pictogram used to represent various electrical and electronic devices or functions, such as wires, batteries, resistors, and transistors, in a schematic diagram of an electrical or electronic circuit. These symbols are largely standardized internationally today, but may ...
In digital electronics, a synchronous circuit is a digital circuit in which the changes in the state of memory elements are synchronized by a clock signal. In a sequential digital logic circuit, data is stored in memory devices called flip-flops or latches. The output of a flip-flop is constant until a pulse is applied to its "clock" input ...
In electronics, a latch-up is a type of short circuit which can occur in an integrated circuit (IC). More specifically, it is the inadvertent creation of a low-impedance path between the power supply rails of a MOSFET circuit, triggering a parasitic structure which disrupts proper functioning of the part, possibly even leading to its destruction due to overcurrent.