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SiGe (/ ˈ s ɪ ɡ iː / or / ˈ s aɪ dʒ iː /), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si 1−x Ge x. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS ...
Experimental phase diagram of MnSi 1−x Ge x alloys, revealing magnetic skyrmion, tetrahedral and cubic hedgehog spin arrangements at different compositions x.. At low temperatures, MnGe and its relative MnSi exhibit unusual spatial arrangements of electron spin, which were named magnetic skyrmion, tetrahedral and cubic hedgehog lattices.
The phase diagram with phosphorus shows SiP and SiP 2. [88] A reported silicon phosphide is Si 12 P 5 (no practical applications), [89] [90] formed by annealing an amorphous Si-P alloy. The arsenic–silicon phase diagram measured at 40 Bar has two phases: SiAs and SiAs 2. [91]
The unusual compound Ge 6 Cl 16 has been prepared that contains the Ge 5 Cl 12 unit with a neopentane structure. [50] Germane (GeH 4) is a compound similar in structure to methane. Polygermanes—compounds that are similar to alkanes—with formula Ge n H 2n+2 containing up to five germanium atoms are known. [42]
SiGe thermocouples in an RTG convert heat directly into electricity.Thermoelectric power generation requires a constantly maintained temperature difference among the junctions of the two dissimilar metals (i.e. Si and Ge) to produce a low power closed circuit electric current without extra circuitry or external power sources.
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Phase diagram of the GeSbTe ternary alloy system. GeSbTe is a ternary compound of germanium, antimony, and tellurium, with composition GeTe-Sb 2 Te 3.In the GeSbTe system, there is a pseudo-line as shown upon which most of the alloys lie.