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SiGe (/ ˈ s ɪ ɡ iː / or / ˈ s aɪ dʒ iː /), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si 1−x Ge x. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS ...
The phase diagram with phosphorus shows SiP and SiP 2. [88] A reported silicon phosphide is Si 12 P 5 (no practical applications), [89] [90] formed by annealing an amorphous Si-P alloy. The arsenic–silicon phase diagram measured at 40 Bar has two phases: SiAs and SiAs 2. [91]
Experimental phase diagram of MnSi 1−x Ge x alloys, revealing magnetic skyrmion, tetrahedral and cubic hedgehog spin arrangements at different compositions x.. At low temperatures, MnGe and its relative MnSi exhibit unusual spatial arrangements of electron spin, which were named magnetic skyrmion, tetrahedral and cubic hedgehog lattices.
The phase diagram shows, in pressure–temperature space, the lines of equilibrium or phase boundaries between the three phases of solid, liquid, and gas. The curves on the phase diagram show the points where the free energy (and other derived properties) becomes non-analytic: their derivatives with respect to the coordinates (temperature and ...
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2 Ge. Germanium cluster anions (Zintl ions) such as Ge 4 2−, Ge 9 4−, Ge 9 2−, [(Ge 9) 2] 6− have been prepared by the extraction from alloys containing alkali metals and germanium in liquid ammonia in the presence of ethylenediamine or a cryptand. [1] [3] The oxidation states of the element in these ions are not integers—similar to ...
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A miscibility gap between isostructural phases may be described as the solvus, a term also used to describe the boundary on a phase diagram between a miscibility gap and other phases. [2] Thermodynamically, miscibility gaps indicate a maximum (e.g. of Gibbs energy) in the composition range. [3] [4]