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To understand how band structure changes relative to the Fermi level in real space, a band structure plot is often first simplified in the form of a band diagram. In a band diagram the vertical axis is energy while the horizontal axis represents real space. Horizontal lines represent energy levels, while blocks represent energy bands. When the ...
Band diagram for Schottky barrier at equilibrium Band diagram for semiconductor heterojunction at equilibrium. In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. [1]
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states.
Band bending can be induced by several types of contact. In this section metal-semiconductor contact, surface state, applied bias and adsorption induced band bending are discussed. Figure 1: Energy band diagrams of the surface contact between metals and n-type semiconductors.
A configuration-coordinate diagram of the valence band, conduction band and dangling bond energy band in silicon. The arrows indicate the relaxation energies. A dangling bond adds an extra energy level between the valence band and conduction band of a lattice. This allows for absorption and emission at longer wavelengths, because electrons can ...
Energy band diagram of a simple bipolar junction transistor under equilibrium showing electron energy versus position. The depletion regions of the emitter-base and base-collector junctions are marked. <math>E_c</math> is the conduction band
Anderson's rule is used for the construction of energy band diagrams of the heterojunction between two semiconductor materials. Anderson's rule states that when constructing an energy band diagram, the vacuum levels of the two semiconductors on either side of the heterojunction should be aligned (at the same energy). [1]
Band diagram for n-type semiconductor Schottky barrier at zero bias (equilibrium) with graphical definition of the Schottky barrier height, Φ B, as the difference between the interfacial conduction band edge E C and Fermi level E F. [For a p-type Schottky barrier, Φ B is the difference between E F and the valence band edge E V.]