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Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components. STI is generally used on CMOS process technology nodes of 250 nanometers and smaller.
In Python, the library's copy module provides shallow copy and deep copy of objects through the copy() and deepcopy() functions, respectively. [13] Programmers may define special methods __copy__() and __deepcopy__() in an object to provide custom copying implementation. In Ruby, all objects inherit two methods for performing shallow copies ...
The distinction between shallow and deep traps is commonly made depending on how close electron traps are to the conduction band and how close hole traps are to the valence band. If the difference between trap and band is smaller than the thermal energy k B T it is often said that it is a shallow trap.
The mode can be determined by the sign of the threshold voltage (gate voltage relative to source voltage at the point where an inversion layer just forms in the channel): for an N-type FET, enhancement-mode devices have positive thresholds, and depletion-mode devices have negative thresholds; for a P-type FET, enhancement-mode have negative ...
A deep channel 1 + 5 ⁄ 8 in × 2 + 7 ⁄ 16 in (41 mm × 62 mm) version is also manufactured. The material used to form the channel is typically sheet metal with a thickness of 1.5 mm or 2.5 mm (12 or 14 gauge; 0.1046 inch or 0.0747 inch, respectively). [2] Types of channel
The structural channel, C-channel or parallel flange channel (PFC), is a type of (usually structural steel) beam, used primarily in building construction and civil engineering. Its cross section consists of a wide "web", usually but not always oriented vertically, and two "flanges" at the top and bottom of the web, only sticking out on one side ...
Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. It is one of several short-channel effects in MOSFET scaling.
In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering , velocity saturation , quantum confinement and hot carrier degradation .