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The pad and wafer are pressed together by a dynamic polishing head and held in place by a plastic retaining ring. The dynamic polishing head is rotated with different axes of rotation (i.e., not concentric). This removes material and tends to even out any irregular topography, making the wafer flat or planar. This may be necessary to set up the ...
Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography.
The wafer is lifted by the wafer prober until metal pads on one or more ICs on the wafer make physical contact with the probes. A certain amount of over-travel is required after the first probe makes contact with the wafer, for two reasons: to guarantee that all probes have made contact (to account for non-planarity of the wafer)
Electropolishing, also known as electrochemical polishing, anodic polishing, or electrolytic polishing (especially in the metallography field), is an electrochemical process that removes material from a metallic workpiece, reducing the surface roughness by levelling micro-peaks and valleys, improving the surface finish.
Ion milling is a specialized physical etching technique that is a crucial step in the preparation of material analysis techniques. After a specimen goes through ion milling, the surface becomes much smoother and more defined, which allows scientists to study the material much easier.
Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS ...