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  2. Zener effect - Wikipedia

    en.wikipedia.org/wiki/Zener_effect

    In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...

  3. Avalanche breakdown - Wikipedia

    en.wikipedia.org/wiki/Avalanche_breakdown

    These diodes can indefinitely sustain a moderate level of current during breakdown. The voltage at which the breakdown occurs is called the breakdown voltage . There is a hysteresis effect; once avalanche breakdown has occurred, the material will continue to conduct even if the voltage across it drops below the breakdown voltage.

  4. Zener diode - Wikipedia

    en.wikipedia.org/wiki/Zener_diode

    The emitter–base junction of a bipolar NPN transistor behaves as a Zener diode, with breakdown voltage at about 6.8 V for common bipolar processes and about 10 V for lightly doped base regions in BiCMOS processes. Older processes with poor control of doping characteristics had the variation of Zener voltage up to ±1 V, newer processes using ...

  5. Zener - Wikipedia

    en.wikipedia.org/wiki/Zener

    Zener can refer to: . Zener diode, a type of electronic diode; Zener effect, a type of electrical breakdown which is employed in a Zener diode; Zener pinning, the influence of a dispersion of fine particles on the movement of low- and high angle grain boundaries through a polycrystalline material

  6. Diode - Wikipedia

    en.wikipedia.org/wiki/Diode

    In the Zener diode, the concept of PIV is not applicable. A Zener diode contains a heavily doped p–n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material, such that the reverse voltage is "clamped" to a known value (called the Zener voltage), and avalanche does not ...

  7. p–n junction - Wikipedia

    en.wikipedia.org/wiki/P–n_junction

    The negatively charged ("acceptor") dopant atoms in the p-type are part of the crystal, and cannot move. Thus, in the p-type, a region near the junction becomes negatively charged. The result is a region near the junction that acts to repel the mobile charges away from the junction because of the electric field that these charged regions create.

  8. Breakdown voltage - Wikipedia

    en.wikipedia.org/wiki/Breakdown_voltage

    Breakdown voltage is a characteristic of an insulator that defines the maximum voltage difference that can be applied across the material before the insulator conducts. In solid insulating materials, this usually [citation needed] creates a weakened path within the material by creating permanent molecular or physical changes by the sudden current.

  9. Backward diode - Wikipedia

    en.wikipedia.org/wiki/Backward_diode

    In the case of Zener breakdown, it starts at a particular voltage. In this diode the voltage remains relatively constant (independent of current) when it is connected in reverse bias. The backward diode is a special form of tunnel diode in which the tunneling phenomenon is only incipient, and the negative resistance region virtually disappears.