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In semiconductor device fabrication, the various processing steps fall into four general categories: deposition, removal, patterning, and modification of electrical properties. Deposition is any process that grows, coats, or otherwise transfers a material onto the wafer.
Wafer fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits on semiconductor wafers in semiconductor device fabrication process. Examples include production of radio frequency amplifiers, LEDs, optical computer components, and microprocessors for computers. Wafer ...
Illustration of FEOL (device generation in the silicon, bottom) and BEOL (depositing metalization layers, middle part) to connect the devices. CMOS fabrication process. The front end of line (FEOL) is the first portion of IC fabrication where the individual components (transistors, capacitors, resistors, etc.) are patterned in a semiconductor substrate. [1]
Pre-gate cleaning is the most critical cleaning step in CMOS fabrication: it ensures that the ca. 2 nm thick oxide of a MOS transistor can be grown in an orderly fashion. Oxidation, and all high temperature steps are very sensitive to contamination, and cleaning steps must precede high temperature steps.
The BEOL process deposits metalization layers on the silicion to interconnect the individual devices generated during FEOL (bottom). CMOS fabrication process. Back end of the line or back end of line (BEOL) is a process in semiconductor device fabrication that consists of depositing metal interconnect layers onto a wafer already patterned with devices.
Wafer mounting is a step that is performed during the die preparation of a wafer as part of the process of semiconductor fabrication. During this step, the wafer is mounted on a plastic tape that is attached to a ring. Wafer mounting is performed right before the wafer is cut into separate dies. The adhesive film upon which the wafer is mounted ...